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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1495 DESCRIPTION *High DC Current Gain: hFE= 2000(Min)@ (VCE= -2V, IC= -2A) *Low-Collector Saturation Voltage: VCE(sat)= -1.5V(Max.)@IC= -1.5A *Complement to Type 2SD2257 APPLICATIONS *Designed for high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ww w -100 -100 scs .i UNIT V V -8 V -3 A -5 A -0.3 A .cn mi e ICM Collector Current-Pulse IB Base Current-Continuous Collector Power Dissipation @Ta=25 2 W PC Collector Power Dissipation @TC=25 TJ Junction Temperature 20 150 Tstg Storage Temperature -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= -10mA; IB= 0 IC= -1.5A; IB= -1.5mA B 2SB1495 MIN -100 TYP. MAX UNIT V -1.5 -2.0 -10 -4.0 2000 2000 V V A IC= -1.5A; IB= -1.5mA B VCB= -100V; IE= 0 VEB= -8V; IC= 0 mA Switching Times Turn-on Time Storage Time Fall Time ton tstg tf w w w. .cn mi cse is IC= -1A; VCE= -2V IC= -2A; VCE= -2V IC= -1.5A, IB1= -IB2= -1.5mA, VCC -30V; RL= 20 0.5 1.0 0.4 s s s isc Websitewww.iscsemi.cn 2 |
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